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PDF ( 数据手册 , 数据表 ) R2000

零件编号 R2000
描述 HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)
制造商 Rectron Semiconductor
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R2000 数据手册, 描述, 功能
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HIGH VOLTAGE SILICON RECTIFIER
R1200
THRU
R2000
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.35 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 50oC
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
CJ
TJ, TSTG
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC
Maximum DC Reverse Current
@TA = 25oC
at Rated DC Blocking Voltage
@TA =100oC
Maximum Full Load Reverse Current Average, Full Cycle
.375”, (9.5mm) lead length at TL = 75oC
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
R1200
1200
840
1200
R1200
1.0 (25.4)
MIN.
.034 (0.9) DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
1.0 (25.4)
MIN.
.107 (2.7)
DIA.
.080 (2.0)
Dimensions in inches and (millimeters)
R1500
1500
1050
1500
500
R1800
1800
1260
1800
30
30
-65 to + 175
R2000
2000
1400
2000
200
UNITS
Volts
Volts
Volts
mAmps
Amps
pF
0C
R1500
R1800
2.0
5.0
50
30
R2000
3.0
UNITS
Volts
uAmps
uAmps
2001-6












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