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零件编号 | TIP105 | ||
描述 | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | ||
制造商 | Motorola Semiconductors | ||
LOGO | |||
1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP100/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105
VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106
VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–in Base–Emitter Shunt Resistors
• TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
TIP100, TIP101, TIP102,
Symbol TIP105 TIP106 TIP107
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
8.0
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
IB
PD
1.0
80
0.64
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy (1)
E
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD
2.0
0.016
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.
1.56
62.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
mJ
Watts
W/_C
_C
Unit
_C/W
_C/W
TA TC
4.0 80
NPN
TIP100
TIP101*
TIP102*
PNP
TIP105
TIP106*
TIP107*
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
TC
1.0 20
TA
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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页数 | 6 页 | ||
下载 | [ TIP105.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
TIP100 | Monolithic Construction | SemiHow |
TIP100 | Darlington NPN Power Transistors | TAITRON |
TIP100 | POWER TRANSISTORS(8A/60-100V/80W) | Mospec Semiconductor |
TIP100 | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola Semiconductors |
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STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
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