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PDF ( 数据手册 , 数据表 ) TIP102

零件编号 TIP102
描述 NPN Epitaxial Silicon Darlington Transistor
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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TIP102 数据手册, 描述, 功能
December 2014
TIP102
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP107
Equivalent Circuit
C
B
1 TO-220
1.Base 2.Collector 3.Emitter
R1
≅Ω
≅Ω
R2
E
Ordering Information
Part Number
TIP102
TIP102TU
Top Mark
TIP102
TIP102
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Junction Temperature
Storage Temperature Range
100
100
5
8
15
1
150
-65 to 150
V
V
V
A
A
A
°C
°C
© 2001 Fairchild Semiconductor Corporation
TIP102 Rev. 1.1.0
www.fairchildsemi.com












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