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PDF ( 数据手册 , 数据表 ) TN0620

零件编号 TN0620
描述 N-Channel Enhancement-Mode Vertical DMOS FETs
制造商 Supertex Inc
LOGO Supertex  Inc LOGO 


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TN0620 数据手册, 描述, 功能
TN0620
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (1.6V max.)
High input impedance
Low input capacitance (110pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
TO-92
TN0620
TN0620N3-G
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
200
RDS(ON)
(max)
(Ω)
6.0
ID(ON)
(min)
(A)
1.0
Pin Configurations
VGS(th)
(max)
(V)
1.6
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
T N YY = Year Sealed
0 6 2 0 WW = Week Sealed
YYWW
= “Green” Packaging
TO-92 (N3)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com












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