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零件编号 | XN1872 | ||
描述 | Silicon N-channel . Enhancement MOS FET | ||
制造商 | Panasonic Semiconductor | ||
LOGO | |||
1 Page
Composite Transistors
XN1872
Silicon N-channel • Enhancement MOS FET
For switching
s Features
q Two elements incorporated into one package.
(Source-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SK621 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Drain to source voltage
Rating Gate to source voltage
of
element Drain current
Total power dissipation
Overall Channel temperature
Storage temperature
VDSS
VGSO
ID
IDM
PT
Tch
Tstg
50
8
100
200
300
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
1 : Drain (Tr1)
2 : Drain (Tr2)
3 : Gate (Tr2)
4 : Source
5 : Gate (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5U
Internal Connection
FET 1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
Drain current
IDSS
Gate cutoff current
IGSS
Gate threshold voltage
Vth
Drain resistance
RDS(on)
Forward transfer admittance
| Yfs |
Output voltage high level
VOH
Output voltage low level
Input resistance
Turn-on time
Turn-off time
VOL
R1+R2*1
ton*2
toff*2
Common source short-circuit input capacitance Ciss
*1 Pulse measurement
*2 Resistance ratio R1/R2 = 1/50
ID = 100µA, VGS = 0
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDS = 5V, VGS = 1V, RL = 200Ω
VDS = 5V, VGS = 5V, RL = 200Ω
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
VDS = 5V, VGS = 0, f = 1MHz
min
50
40
1.5
20
4.5
100
FET 2
2
typ max Unit
V
10 µA
80 µA
3.5 V
50 Ω
30 mS
V
1.0 V
200 kΩ
1.0 µs
1.0 µs
9 15 pF
1
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页数 | 2 页 | ||
下载 | [ XN1872.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
XN1871 | Silicon N-channel junction FET | Panasonic Semiconductor |
XN1872 | Silicon N-channel . Enhancement MOS FET | Panasonic Semiconductor |
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