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PDF ( 数据手册 , 数据表 ) IR20153S

零件编号 IR20153S
描述 HIGH SIDE DRIVER WITH RECHARGE
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IR20153S 数据手册, 描述, 功能
Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
Product Summary
Floating channel designed for bootstrap operation
Fully operational up to 150V
VOFFSET
150V max.
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11µs and 0.8µs
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
IO+/-
VOUT
ton/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 µs
Description
Package
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1







IR20153S pdf, 数据表
IR20153S & (PbF)
IN
RESET
Vs
HOH,L
Recharge
FET
T on
OFF
Toff_rech
5V
T off
ON
Ton_rech
Figure 2. Input/Output Timing Diagram
90%
90%
10%
Tr
10%
Tf
Figure 2a. Output Timing Diagram
8 www.irf.com














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