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零件编号 | SB02W03C | ||
描述 | 30V / 200mA Rectifier | ||
制造商 | Sanyo Semicon Device | ||
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1 Page
Ordering number:EN2983A
SB02W03C
Schottky Barrier Diode (Twin Type · Cathode Common)
30V, 200mA Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1169A
[SB02W03C]
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (1)
Thermal Resistance (2)
Marking : L
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=50µA
IF=200mA
VR=15V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
Moutned on Cu-foild area of
16mm2×0.2mm on glass epoxy board
Electrical Connection
1:Anode
2:Anode
3:Cathode
SANYO:CP
Ratings
30
35
200
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
30
6.3
525
380
max
0.55
15
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
1:Anode
2:Anode
3:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/D1096GI/1269TA, TS No.2983-1/2
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页数 | 2 页 | ||
下载 | [ SB02W03C.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SB02W03C | 30V / 200mA Rectifier | Sanyo Semicon Device |
SB02W03S | 30V / 200mA Rectifier | Sanyo Semicon Device |
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