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零件编号 | SB0030-01A | ||
描述 | Schottky Barrier Diode | ||
制造商 | Sanyo Semicon Device | ||
LOGO | |||
1 Page
Ordering number:EN2191A
SB0030-01A
Schottky Barrier Diode
10V, 30mA Detection Applications
Features
· Glass sleeve structure.
· Detection efficiency : 70%.
· Small size (Half the size of the DO-35 heretofore in
use).
Package Dimensions
unit:mm
1153A
[SB0030-01A]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
VR
IO
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Forward Current
Reverse Current
Capacitance
Detection Efficiency
Detection Efficiency Circuit
Symbol
IF VF=1.0V
IR VR=6V
C VR=1V, f=1MHz
η f=40MHz
Conditions
C:Cahode
A:Anode
Ratings
10
30
100
–55 to +100
Unit
V
mA
˚C
˚C
Ratings
min typ
4.5
70
max
70
1.5
Unit
mA
µA
pF
%
Unit (resistance : Ω, capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/1169TA/O236TA, TS No.2191-1/3
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页数 | 3 页 | ||
下载 | [ SB0030-01A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SB0030-01A | Schottky Barrier Diode | Sanyo Semicon Device |
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