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PDF ( 数据手册 , 数据表 ) K9F1208Q0B-D

零件编号 K9F1208Q0B-D
描述 64M x 8 Bit NAND Flash Memory
制造商 Samsung semiconductor
LOGO Samsung semiconductor LOGO 


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K9F1208Q0B-D 数据手册, 描述, 功能
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Advance
FLASH MEMORY
Draft Date
Apr. 24th 2004
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F1208Q0B-D pdf, 数据表
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Figure 1-1. K9F1208X0B FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
A9 - A25
A0 - A7
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
512M + 16M Bit
NAND Flash
ARRAY
(512 + 16)Byte x 131072
Command
A8
Command
Register
Page Register & S/A
Y-Gating
I/O Buffers & Latches
CE Control Logic
RE & High Voltage
WE Generator
Global Buffers
Output
Driver
VCC/VCCQ
VSS
I/0 0
I/0 7
CLE ALE WP
Figure 2-1. K9F1208X0B ARRAY ORGANIZATION
1 Block =32 Pages
= (16K + 512) Byte
128K Pages
(=4,096 Blocks)
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
512Byte
16 Byte
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 4096 Blocks
= 528 Mbits
8 bit
Page Register
512 Byte
16 Byte
I/O 0 ~ I/O 7
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
1st Cycle
A0
A1
A2
A3
A4
A5
A6
2nd Cycle A9
A10 A11 A12 A13 A14 A15
3rd Cycle A17 A18 A19 A20 A21 A22 A23
4th Cycle A25
*L
*L
*L
*L
*L
*L
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 7
A7
A16
A24
*L
Column Address
Row Address
(Page Address)
8







K9F1208Q0B-D equivalent, schematic
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaran-
teed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 6th byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure that either the
1st or 2nd page of every invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column address of 517(X8
device) or 256 and 261(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover the
information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original
invalid block information and create the invalid block table via the following suggested flow chart(Figure 4). Any intentional erasure of
the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update)
Invalid Block(s) Table
No
*
Check "FFh" ?
Check "FFh" at the column address
517(X8 device) or 256 and 261(X16 device)
of the 1st and 2nd page in the block
Yes
No Last Block ?
Yes
End
Figure 4. Flow chart to create invalid block table.
16










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