DataSheet8.cn


PDF ( 数据手册 , 数据表 ) K6F2016U4E-F

零件编号 K6F2016U4E-F
描述 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
制造商 Samsung semiconductor
LOGO Samsung semiconductor LOGO 


1 Page

No Preview Available !

K6F2016U4E-F 数据手册, 描述, 功能
K6F2016U4E Family
CMOS SRAM
Document Title
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
1.0 Finalize
- Change ICC2 from 21 to 26mA for 55ns product.
- Change ICC2 from 17 to 20mA for 70ns product.
- Remove "A1 Index Mark" of 48-TBGA package bottom side
2.0 Revise
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
Draft Date
February 21, 2001
Remark
Preliminary
April 30, 2001
Final
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 2.0
September 2001







K6F2016U4E-F pdf, 数据表
K6F2016U4E Family
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
Address
CS
UB, LB
WE
Data in
tAS(3)
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
tDW tDH
Data Valid
CMOS SRAM
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS or LB/UB controlled
VCC
2.7V
tSDR
2.2V
VDR
CS or LB/UB
GND
Data Retention Mode
CSVCC-0.2V or LB=UBVcc-0.2V
tRDR
- 8 - Revision 2.0
September 2001














页数 9 页
下载[ K6F2016U4E-F.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
K6F2016U4E-F128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMSamsung semiconductor
Samsung semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap