DataSheet8.cn


PDF ( 数据手册 , 数据表 ) K6F1616T6B-EF70

零件编号 K6F1616T6B-EF70
描述 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
制造商 Samsung semiconductor
LOGO Samsung semiconductor LOGO 


1 Page

No Preview Available !

K6F1616T6B-EF70 数据手册, 描述, 功能
K6F1616T6B Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed Isb1(max.) from 25uA to 15uA
1.0 Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003
June 17, 2003
Remark
Preliminary
Preliminary
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003







K6F1616T6B-EF70 pdf, 数据表
K6F1616T6B Family
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
Address
tWC
tCW(2)
CS1
tAW
CS2
UB, LB
WE
tAS(3)
tBW
tWP(1)
Data in
tWR(4)
tDW tDH
Data Valid
CMOS SRAM
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1 and low WE. A write begins when CS1 goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS1 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS1 or WE going high.
DATA RETENTION WAVEFORM
CS1 controlled
VCC
2.7V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CS1
GND
CS2 controlled
VCC
2.7V
CS2
VDR
0.4V
GND
CS1VCC - 0.2V
Data Retention Mode
tSDR
CS20.2V
tRDR
8 Revision 1.0
August 2003














页数 10 页
下载[ K6F1616T6B-EF70.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
K6F1616T6B-EF701M x16 bit Super Low Power and Low Voltage Full CMOS Static RAMSamsung semiconductor
Samsung semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap