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PDF ( 数据手册 , 数据表 ) K6E0808C1E-I

零件编号 K6E0808C1E-I
描述 32K x 8 Bit High-Speed CMOS Static RAM
制造商 Samsung semiconductor
LOGO Samsung semiconductor LOGO 


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K6E0808C1E-I 数据手册, 描述, 功能
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
Document Title
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0 Release to Final Data Sheet.
Rev. 2.0 2.1. Add Low Power Version.
2.2. Add data retention charactoristic.
Draft Data
Aug. 1. 1998
Nov. 2. 1998
Feb. 25. 1999
Remark
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 2.0
Feburary 1999







K6E0808C1E-I pdf, 数据表
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
FUNCTIONAL DESCRIPTION
CS WE
HX
LH
LH
LL
* X means Dont Care.
OE
X*
H
L
X
Mode
Not Select
Output Disable
Read
Write
I/O Pin
High-Z
High-Z
DOUT
DIN
For Cisco
CMOS SRAM
Supply Current
ISB, ISB1
ICC
ICC
ICC
DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)
Parameter
VCC for Data Retention
Data Retention Current
Symbol
VDR
IDR
Test Condition
CSVCC-0.2V
VCC=3.0V, CSVCC-0.2V
VINVCC-0.2V or VIN0.2V
Data Retention Set-Up Time
Recovery Time
tSDR
tRDR
See Data Retention
Wave form(below)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-Ver only.
Min.
2.0
-
Typ.
-
-
Max.
5.5
0.5
Unit
V
mA
0 - - ns
5 - - ms
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
tSDR
VIH
VDR
CS
GND
Data Retention Mode
CSVCC - 0.2V
tRDR
-8-
Revision 2.0
Feburary 1999














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