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PDF ( 数据手册 , 数据表 ) KSE182

零件编号 KSE182
描述 Low Power Audio Amplifier Low Current High Speed Switching Applications
制造商 Fairchild Semiconductor
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KSE182 数据手册, 描述, 功能
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
NPN Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSE180
: KSE181
: KSE182
Value
60
80
100
VCEO
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
40
60
80
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
7
3
6
1
1.5
12.5
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector -Emitter Breakdown Voltage
: KSE180
: KSE181
: KSE182
Test Condition
IC = 10mA, IB = 0
Min.
40
60
80
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Collector Cut-off Current : KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
VBE = 7V, IC = 0
VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1.5A
IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
VCE = 1V, IC = 500mA
VCE = 10V, IC = 100mA
VCB = 10V, IE = 0, f = 0.1MHz
50
30
12
50
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
0.1 µA
0.1 µA
0.1 µA
0.1 mA
0.1 mA
0.1 mA
0.1 µA
250
0.3 V
0.9 V
1.7 V
1.5 V
2.0 V
1.2 V
MHz
30 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001












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