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PDF ( 数据手册 , 数据表 ) KSE13006

零件编号 KSE13006
描述 High Voltage Switch Mode Application
制造商 Fairchild Semiconductor
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KSE13006 数据手册, 描述, 功能
KSE13006/13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSE13006
: KSE13007
VCEO
Collector-Emitter Voltage
: KSE13006
: KSE13007
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector- Emitter Breakdown Voltage
: KSE13006
: KSE13007
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50
Min. Typ. Max. Units
300 V
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 µs
3 µs
0.7 µs
©2000 Fairchild Semiconductor International
Rev. A1, December 2000












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