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零件编号 | KSD1944 | ||
描述 | High Gain Power Transistor | ||
制造商 | Fairchild Semiconductor | ||
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1 Page
KSD1944
High Gain Power Transistor
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (TC=25°C)
Junction Temperature
Storage Temperature
Value
80
60
8
3
30
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE
VBE(sat)
VCE(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC = 25mA, IB = 0
VCB = 80V, IE = 0
VEB = 8V, IC = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
IC = 2A, IB = 0.05A
Min.
60
400
Max.
100
10
2000
1.5
1
Units
V
µA
µA
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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页数 | 4 页 | ||
下载 | [ KSD1944.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KSD1943 | High Power Transistor | Fairchild Semiconductor |
KSD1944 | High Gain Power Transistor | Fairchild Semiconductor |
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