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PDF ( 数据手册 , 数据表 ) KSD1621

零件编号 KSD1621
描述 NPN Epitaxial Silicon Transistor
制造商 Fairchild Semiconductor
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KSD1621 数据手册, 描述, 功能
KSD1621
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
PC*
TJ Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2x0.8mm)
1 SOT-89
1. Base 2. Collector 3. Emitter
Ratings
30
25
6
2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
fT Current Gain Bandwidth product
Cob Output Capacitance
tON * Turn On Time
tSTG
* Storage Time
tF * Fall Time
* Pulse Width=20µs, Duty Cycle1%
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VBE=4V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=1.5A
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
VCC=12V, VBE=5V
IB1= -IB2=25mA
IC=0.5A, RL=25
Min.
30
25
6
100
65
Typ.
0.18
0.85
150
19
60
500
25
Max.
100
100
560
Units
V
V
V
nA
nA
0.4 V
1.2 V
MHz
pF
ns
ns
ns
hFE Classification
Classification
hFE
R
100 ~ 200
S
140 ~ 280
Marking
T
200 ~ 400
U
280 ~ 560
©2002 Fairchild Semiconductor Corporation
SYX
hFE grade
Rev. A2, November 2002












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