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零件编号 | KSD1616A | ||
描述 | NPN Epitaxial Silicon Transistor | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
KSD1616/1616A
Audio Frequency Power Amplifier & Medium
Speed Switching
• Complement to KSB1116/1116A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSD1616
: KSD1616A
VCEO
Collector-Emitter Voltage
: KSD1616
: KSD1616A
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle < 50%
1 TO-92
1. Emitter 2. Collector 3. Base
Ratings
60
120
50
60
6
1
2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain : KSD1616
: KSD1616A
hFE2
VBE (on) * Base-Emitter On Voltage
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: PW<350µs, Duty Cycle≤2% Pulsed
VCB=60V, IE=0
VEB=6V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=50mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=10V, IE=0, f=1MHz
VCE=2V, IC=100mA
VCC=10V, IC=100mA
IB1= -IB2=10mA
VBE (off) = -2~-3V
Min.
135
135
81
600
100
Typ.
640
0.15
0.9
19
160
0.07
0.95
0.07
Max.
100
100
600
400
Units
nA
nA
700 mV
0.3 V
1.2 V
pF
MHz
µs
µs
µs
hFE1 Classification
Classification
hFE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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页数 | 5 页 | ||
下载 | [ KSD1616A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KSD1616 | NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING) | Samsung semiconductor |
KSD1616 | Audio Frequency Power Amplifier & Medium Speed Switching | Fairchild Semiconductor |
KSD1616A | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
KSD1616A | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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