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零件编号 | KSB772 | ||
描述 | Audio Frequency Power Amplifier | ||
制造商 | Fairchild Semiconductor | ||
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1 Page
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1 TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
PC Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Rθja Junction to Ambient
Rθjc Junction to Case
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Value
- 40
- 30
-5
-3
-7
- 0.6
10
1
132
13.5
150
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤350µs, Duty Cycle≤2%
VCB = - 30V, IE = 0
VEB = - 3V, IC = 0
VCE = - 2V, IC = - 20mA
VCE = - 2V, IC = - 1A
IC = - 2A, IB = - 0.2A
IC = - 2A, IB = - 0.2A
VCE = - 5V, IE = - 0.1A
VCB = - 10V, IE = 0
f = 1MHz
Min.
30
60
Typ.
220
160
- 0.3
- 1.0
80
55
hFE Classificntion
Classification
hFE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
Units
V
V
V
A
A
A
W
W
°C/W
°C/W
°C
°C
Max.
-1
-1
Units
µA
µA
400
- 0.5
- 2.0
V
V
MHz
pF
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
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页数 | 5 页 | ||
下载 | [ KSB772.PDF 数据手册 ] |
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