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PDF ( 数据手册 , 数据表 ) KSB1121

零件编号 KSB1121
描述 High Current Driver Applications
制造商 Fairchild Semiconductor
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KSB1121 数据手册, 描述, 功能
KSB1121
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSD1621
PNP Epitaxial Planar Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
PC*
TJ Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2 x 0.8mm)
1 SOT-89
1. Base 2. Collector 3. Emitter
Ratings
-30
-25
-6
-2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON * Turn On Time
tSTG
* Storage Time
tF * Fall time
* Pulse Test: PW20µs, Duty Cycle1%
IC= -10µA, IE= 0
IC= -1mA, IB= 0
IE= -10µA, IC= 0
VCB= -20V, IE=0
VBE= -4V, IC= 0
VCE= -2V, IC= -0.1A
VCE= -2V, IC= -1.5A
IC= -1.5A, IB= -75mA
IC= -1.5A, IB= -75mA
VCE= -10V, IC= -50mA
VCB= -10V, IE=0, f=1MHz
VCC= -12V, VBE = -5V
IB1=-IB2=-25mA
IC= -500mA, RL=24
Min.
-30
-25
-6
100
65
Typ.
-0.35
-0.85
150
32
60
350
25
Max.
-100
-100
560
-0.6
-1.2
Units
V
V
V
nA
nA
V
V
MHz
pF
ns
ns
ns
hFE Classification
Classification
hFE1
R
100 ~ 200
S
140 ~ 280
Marking
T
200 ~ 400
U
280 ~ 560
©2001 Fairchild Semiconductor Corporation
SZX
hFE Grade
Rev. A1, June 2001












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