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零件编号 | DT455N | ||
描述 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | ||
制造商 | Diodes Incorporated | ||
LOGO | |||
1 Page
DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
D C 6.71 7.29
D 3.30 3.71
CD
E 2.22 2.35
GD S
EG
JH
P
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
KL
M
N S L 0.66 0.79
M 4.55 4.70
N — 10°
Mechanical Data
P 10° 16°
R 0.254 0.356
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
30
20
±11.5
±40
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
th111ebca...sWWWolidiittthhher001m..00ino102u26no36tziiinnn2g22osoozuzz.rcf22aocoopezzp..eoccrfootmphppepoeeudrrnrmtamininooguuppnninattiisndn.ggRRppQQaaJJddACR=Ris4QQ2gJJ°AAuCa=/=Wr19a.15n0°tC°eC/eW/Wd. .by design while RQCA is determined by the user’s board design.
DS11609 Rev. C-4
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DT455N
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页数 | 4 页 | ||
下载 | [ DT455N.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DT455N | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
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