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PDF ( 数据手册 , 数据表 ) DT451AN

零件编号 DT451AN
描述 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
制造商 Diodes Incorporated
LOGO Diodes Incorporated LOGO 


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DT451AN 数据手册, 描述, 功能
DT451AN
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
SOT-223
Dim Min Max
A 6.30 6.71
D B 2.90 3.10
C 6.71 7.29
CD
D 3.30 3.71
E 2.22 2.35
GD S
EG
JH
P
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
KL
M
N S L 0.66 0.79
M 4.55 4.70
N — 10°
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Continuous
Pulsed
Note 1a
Note 1b
Note 1c
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
30
±20
±7.2
±25
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11606 Rev. C-4
1 of 4
DS451AN












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零件编号描述制造商
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Diodes Incorporated

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