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零件编号 | 5M0365R | ||
描述 | Fairchild Power Switch(FPS) | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
Internal Block Diagram
1
1. GND 2. Drain 3. VCC 4. FB
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5μA
7.5V
27V
OSC
9V
1mA
S
Q
R
2.5R
1R
−
+
L.E.B
0.1V
+
−
+ Thermal S/D
S
Q
R
−
OVER VOLTAGE S/D
Power on reset
©2003 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
#1 GND
Rev.1.0.7
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
1.2
1.1
1.0
0.9
0.8
-50
@ Notes :
1. VGS = 0V
2. ID = 250μA
0 50 100
T J, Junction T em perature [oC]
150
Figure 7. Breakdown Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50
@ Notes:
1. VGS = 10V
2. ID = 1.5 A
0 50 100
T J, Junction T em perature [oC]
150
Figure 8. On-Resistance vs. Temperature
102
Operation in This Area
is Limited by R DS(on)
101 10 μ s
100 μ s
1 ms
100
10 ms
DC
10- 1
@ Notes :
1. TC = 25 o C
2. TJ = 150 oC
3. Single Pulse
10- 2
101 102 103
VDS , Drain-Source Voltage [V]
Figure 9. Max. Safe Operating Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
60 80 100 120
TC, Cas e Tem perature [oC]
140
Figure 10. Max. Drain Current vs. Case Temperature
100
D=0.5
0.2
0.1
10-1 0.05
0.02
0.01
single pulse
@ Notes :
1. ZθJC(t)=1.25 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*ZθJC(t)
10-
2
10-
5
10- 4
10- 3
10- 2
10- 1
t1 , Square Wave Pulse Duration
Figure 11. Thermal Response
100
[sec]
101
8
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页数 | 15 页 | ||
下载 | [ 5M0365R.PDF 数据手册 ] |
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