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零件编号 | FQD5P20 | ||
描述 | 200V P-Channel MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
FQD5P20 / FQU5P20
200V P-Channel MOSFET
May 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
G!
S
!
●
●
▶▲
●
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
FQD5P20 / FQU5P20
-200
-3.7
-2.34
-14.8
± 30
330
-3.7
4.5
-5.5
2.5
45
0.36
-55 to +150
300
Typ Max
-- 2.78
-- 50
-- 110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A, May 2000
Package Dimensions (Continued)
(0.50)
6.60 ±0.20
5.34 ±0.20
(4.34)
IPAK
(0.50)
2.30 ±0.20
0.50 ±0.10
MAX0.96
0.76 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50 ±0.10
©2000 Fairchild Semiconductor International
Rev. A, May 2000
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页数 | 9 页 | ||
下载 | [ FQD5P20.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FQD5P20 | 200V P-Channel MOSFET | Fairchild Semiconductor |
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