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PDF ( 数据手册 , 数据表 ) M27512

零件编号 M27512
描述 NMOS 512K 64K x 8 UV EPROM
制造商 STMicroelectronics
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M27512 数据手册, 描述, 功能
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Figure 1. Logic Diagram
VCC
16
A0-A15
Table 1. Signal Names
A0 - A15
Q0 - Q7
E
GVPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable / Program Supply
Supply Voltage
Ground
E
GVPP
M27512
VSS
8
Q0-Q7
AI00765B
March 1995
1/11







M27512 pdf, 数据表
M27512
Figure 8. Fast Programming Flowchart
VCC = 6V, VPP = 12.5V
n=1
NO
++n
> 25
YES
FAIL
E = 1ms Pulse
NO
VERIFY
++ Addr
YES
E = 3ms Pulse by n
Last NO
Addr
YES
CHECK ALL BYTES
VCC = 5V, VPP = 5V
AI00774B
Figure 9. PRESTO Programming Flowchart
VCC = 6.25V, VPP = 12.75V
SET MARGIN MODE
n=0
NO
++n
= 25
YES
E = 500µs Pulse
NO
VERIFY
YES
++ Addr
FAIL
Last NO
Addr
YES
RESET MARGIN MODE
CHECK ALL BYTES
VCC = 5V, VPP = 5V
AI00773B
DEVICE OPERATION (cont’d)
The Fast Programming Algorithm utilizes two differ-
ent pulse types : initial and overprogram. The du-
ration of the initial E pulse(s) is 1ms, which will then
be followed by a longer overprogram pulse of length
3ms by n (n is an iteration counter and is equal to
the number of the initial one millisecond pulses
applied to a particular M27512 location), before a
correct verify occurs. Up to 25 one-millisecond
pulses per byte are provided for before the over
program pulse is applied.
The entire sequence of program pulses is per-
formed at VCC = 6V and GVPP = 12.5V (byte verifi-
cations at VCC = 6V and GVPP = VIL). When the Fast
Programming cycle has been completed, all bytes
should be compared to the original data with
VCC = 5V.
PRESTO Programming Algorithm
PRESTO Programming Algorithm allows to pro-
gram the whole array with a guaranted margin, in
a typical time of less than 50 seconds (to be com-
pared with 283 seconds for the Fast algorithm).
This can be achieved with the SGS-THOMSON
M27512 due to several design innovations de-
scribed in the next paragraph that improves pro-
gramming efficiency and brings adequate margin
for reliability. Before starting the programming the
internal MARGIN MODE circuit is set in order to
guarantee that each cell is programmed with
enough margin.
Then a sequence of 500µs program pulses are
applied to each byte until a correct verify occurs.
No overprogram pulses are applied since the verify
in MARGIN MODE provides the necessary margin
to each programmed cell.
Program Inhibit
Programming of multiple M27512s in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GVPP) of the parallel
M27512 may be common. A TTL low level pulse
applied to a M27512’s E input, with GVpp at 12.5V,
will program that M27512. A high level E input
inhibits the other M27512s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correctly
programmed. The verify is accomplished with GVpp
and E at VIL. Data should be verified tDV after the
falling edge of E.
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