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PDF ( 数据手册 , 数据表 ) AU5780AD

零件编号 AU5780AD
描述 SAE/J1850/VPW transceiver
制造商 NXP Semiconductors
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AU5780AD 数据手册, 描述, 功能
INTEGRATED CIRCUITS
AU5780A
SAE/J1850/VPW transceiver
Product data
Supersedes data of 1999 Jan 28
2001 Jun 19
Philips
Semiconductors







AU5780AD pdf, 数据表
Philips Semiconductors
SAE/J1850/VPW transceiver
Product data
AU5780A
DYNAMIC CHARACTERISTICS
–40°C < Tamb < +125°C; 9V < VBATT< 16V; V/LB > 3V; 0V <VBUS < +8.5V;
RS = 56.2 kW; Rd= 10 kW; Rf= 15 kW; Rb= 10W; BUS_OUT: 300W < RL< 1.6 kW;
1.7 ms < (RL * CL) < 5.2 ms; 2.2 nF < CL < 16.55 nF; RX: CL < 40pF; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Pins TX, RX, /LB
tpI Delay TX to RX rising and falling edge in
loop-back mode
tdIb Delay /LB to BUS_OUT
Pin BUS_OUT
/LB low
6 V < VBATT < 24 V
TX high, toggle /LB
tbo
tbo_hibatt
tbo_lobatt
tr, tf
tr_hibatt,
tf_hibatt
tr_lobatt,
tf_lobatt
Isr
Delay TX to BUS_OUT, normal battery
Measured at 3.875V, Note 3
Delay TX to BUS_OUT, high battery
Measured at 3.875V,
16V < VBATT< 24V, Note 3
Delay TX to BUS_OUT, low battery
Measured at 3.875V,
6V < VBATT< 9V, Note 3
BUS_OUT transition times, rise and fall, normal
battery
Measured between
1.5 V and (VBATT – 2.75 V),
9 < VBATT < 16 V,
tr tested at an additional bus load
of RLOAD = 400 W and
CLOAD = 22000 pF
BUS_OUT transition times, rise and fall, high
battery
Measured between
1.5 V and 6.25 V,
16 < VBATT < 24 V,
tr tested at an additional bus load
of RLOAD = 400 W and
CLOAD = 22000 pF
BUS_OUT transition times, rise and fall, low
battery
Measured between
1.5 V and 6.25 V,
6 < VBATT < 9 V,
tr tested at an additional bus load
of RLOAD = 400 W and
CLOAD = 22000 pF
Bus output current slew rate
6V < VBATT< 16V; RS = 56.2 kW
RL= 100W; measured at 30% and
70% of waveform, DC offset
0 to –2V
VdB_limit
Bus emissions voltage output
VdB_limit–1 Bus emissions voltage output, negative bus
offset
NR Bus noise rejection from battery
NI Bus noise isolation from battery
0 V < DC_offset < 1 V,
9 V < VBATT < 24 V,
RL = 500 W, CL = 6 nF
–1 V < DC_offset < 0 V,
9 V < VBATT < 24 V,
RL = 500 W, CL = 6 nF
30 Hz < f < 250kHz
250 kHz < f < 200 MHz
MIN.
15
1
13
13
13
11
11
(VBATT
– 4.25)
/ 0.43
0.90
20
17
TYP.
MAX. UNIT
24 µs
10 µs
21 µs
21 µs
22 µs
18 µs
18 µs
(VBATT µs
– 4.25)
/ 0.264
2.4 mA/µs
–50 dBV
–50 dBV
dB
dB
2001 Jun 19
8














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