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PDF ( 数据手册 , 数据表 ) F6492

零件编号 F6492
描述 LONG SCALE MICROCHANNEL PLATE
制造商 Hamamatsu Corporation
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F6492 数据手册, 描述, 功能
LONG SCALE
MICROCHANNEL PLATE
F6492
Very Long (Effective Area: 127 4mm)
This new long-scale MCP allows for continuous detection
of wide range position information without dead space cor-
rection. This new configuration promises reliable measure-
ment, and is well suited for double-focusing mass spec-
trometers. Assembled configurations are also available
upon request.
FEATURES
Long Scale (Effective Area: 127mm 4mm)
Simultaneous Multielement Measurement Possible
Sensitive to Ions, Electrons, UV Radiation,
Soft X-rays, -rays and High Energy Particles
High Gain (1 104)
APPLICATIONS
SIMS (Secondary Ions Mass Spectrometers)
UV Spectrometers
X-ray Spectrometers
Electron Spectrometers
GENERAL
Parameter
Outer Dimension
Electrode Dimension
Effective Area Dimension
Thickness
Channel Diameter
Channel Pitch
Bias Angle
Open Area Ratio
Electrode Material
Description/Value
140 9
138 8
127 4
0.48
12
15
8
60
Inconel
Unit
mm
mm
mm
mm
m
m
%
CHARACTERISTICS (at 1000V, 1.3 10-4 Pa (1 10-6 Torr), 25 )
Parameter
Current Gain Min.
Plate Resistance
Maximum Dark Current
Maximum Linear Output Current
Discription/Value
1 104
10 to 100
5 10-13
up to 7% of the strip current
Unit
M
A/cm2
MAXIMUM RATINGS (Absolute Values)
Parameter
Supply Voltage
Ambient Temperature
Discription/Value
1000
-50 to +50
Unit
V
NOTE:
: Strip current is current flowing through the channel walls, which supplies
the current released from the channel walls. It is given by: Supply voltage
/ Plate resistance.
: At a vacuum of 1.3 10-4 Pa (1 10-6 Torr) or better.
TMCPF0064
Figure 1: Typical Current Gain
TMCPB0036EA
105
104
103
102
500 600 700 800 900 1000 1100
SUPPLY VOLTAGE (V)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1996 Hamamatsu Photonics K.K.












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