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PDF ( 数据手册 , 数据表 ) FDT458P

零件编号 FDT458P
描述 30V P-Channel PowerTrench MOSFET
制造商 Fairchild Semiconductor
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FDT458P 数据手册, 描述, 功能
June 2001
FDT458P
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
Applications
Battery chargers
Motor drives
Features
3.4 A, –30 V. RDS(ON) = 130 m@ VGS = 10 V
RDS(ON) = 200 m@ VGS = 4.5 V
Fast switching speed
Low gate charge (2.5 nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability in a
widely used surface mount package
DD
DD
S
SOT-223
D
G
GD S
SOT-223*
(J23Z)
G
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
458P
FDT458P
13’’
Ratings
– 30
±20
3.4
10
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)












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