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PDF ( 数据手册 , 数据表 ) FDS6064N7

零件编号 FDS6064N7
描述 20V N-Channel PowerTrench MOSFET
制造商 Fairchild Semiconductor
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FDS6064N7 数据手册, 描述, 功能
May 2003
FDS6064N7
20V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
23 A, 20 V.
RDS(ON)
RDS(ON)
RDS(ON)
= 3.5 m@ VGS = 4.5 V
= 4 m@ VGS = 2.5 V
= 6 m@ VGS = 1.8 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching, low gate charge
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6064N7
FDS6064N7
13’’
Ratings
20
±8
23
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS6064N7 Rev D2 (W)












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