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PDF ( 数据手册 , 数据表 ) FDS4672A

零件编号 FDS4672A
描述 40V N-Channel PowerTrench MOSFET
制造商 Fairchild Semiconductor
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FDS4672A 数据手册, 描述, 功能
May 2001
FDS4672A
40V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Features
11 A, 40 V. RDS(ON) = 13 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (35 nC typical)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4672A
FDS4672A
13’’
5
6
7
8
Ratings
40
±12
11
50
2.5
1.4
1.2
55 to +175
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS4672A Rev C(W)












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