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零件编号 | FDG6335N | ||
描述 | 20V N & P-Channel PowerTrench MOSFETs | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Loadswitch
Features
• 0.7 A, 20 V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
Dual N-Channel
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.35
FDG6335N
7’’
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
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页数 | 5 页 | ||
下载 | [ FDG6335N.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDG6335N | 20V N & P-Channel PowerTrench MOSFETs | Fairchild Semiconductor |
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