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PDF ( 数据手册 , 数据表 ) FDG6317NZ

零件编号 FDG6317NZ
描述 Dual 20v N-Channel PowerTrench MOSFET
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FDG6317NZ 数据手册, 描述, 功能
January 2004
FDG6317NZ
Dual 20v N-Channel PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
DC/DC converter
Power management
Loadswitch
Features
0.7 A, 20 V.
RDS(ON) = 400 m@ VGS = 4.5 V
RDS(ON) = 550 m@ VGS = 2.5 V
ESD protection diode (note 3)
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
Pin 1
D
G
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.67
FDG6317NZ
7’’
©2004 Fairchild Semiconductor Corporation
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDG6317NZ Rev B (W)












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