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PDF ( 数据手册 , 数据表 ) FDG326P

零件编号 FDG326P
描述 P-Channel 1.8V Specified PowerTrench MOSFET
制造商 Fairchild Semiconductor
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FDG326P 数据手册, 描述, 功能
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–1.5 A, –20 V.
RDS(ON) = 140 m@ VGS = –4.5 V
RDS(ON) = 180 m@ VGS = –2.5 V
RDS(ON) = 250 m@ VGS = –1.8 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.26
FDG326P
7’’
16
25
34
Ratings
–20
±8
–1.5
–6
0.75
0.48
-55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)












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