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零件编号 | FDD6676 | ||
描述 | 30V N-Channel PowerTrench MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
April 2001
FDD6676
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 78 A, 30 V
RDS(ON) = 7.5 mΩ @ VGS = 10 V
RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676
FDD6676
13’’
D
G
S
Ratings
30
±16
78
100
83
3.8
1.6
-55 to +175
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD6676 Rev C(W)
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页数 | 6 页 | ||
下载 | [ FDD6676.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDD6670 | N-Channel/ Logic Level/ PowerTrench MOSFET | Fairchild Semiconductor |
FDD6670A | N-Channel/ Logic Level/ PowerTrench MOSFET | Fairchild Semiconductor |
FDD6670AL | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDD6670S | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
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