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零件编号 | FDD6296 | ||
描述 | 30V N-Channel Fast Switching PowerTrench MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
Features
• 50A, 30 V
RDS(ON) = 8.8 mΩ @ VGS = 10 V
RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
± 20
50
15
100
52
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6296
FDD6296
D-PAK (TO-252)
13’’
FDU6296
FDU2696
I-PAK (TO-251)
Tube
Tape width
12mm
N/A
Units
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6296/FDU6296 Rev C(W)
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页数 | 6 页 | ||
下载 | [ FDD6296.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDD6296 | 30V N-Channel Fast Switching PowerTrench MOSFET | Fairchild Semiconductor |
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