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PDF ( 数据手册 , 数据表 ) FDD2572

零件编号 FDD2572
描述 N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
制造商 Fairchild Semiconductor
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FDD2572 数据手册, 描述, 功能
September 2002
FDD2572 / FDU2572
N-Channel PowerTrench® MOSFET
150V, 29A, 54m
Features
• rDS(ON) = 45m(Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82860
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
TO-252AA
FDD SERIES
TO-251AA
FDU SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
Ratings
150
±20
29
20
4
Figure 4
36
135
0.9
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11
100
52
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B







FDD2572 pdf, 数据表
PSPICE Electrical Model
.SUBCKT FDD2572 2 1 3 ;
CA 12 8 5.5e-10
Cb 15 14 7.4e-10
Cin 6 8 1.7e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 160
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 1.21e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 4.45e-9
RLgate 1 9 12.1
RLdrain 2 5 10
RLsource 3 7 44.5
rev April 2002
GATE
1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
LGATE
RLGATE
-
ESG
6
8
+ EVTHRES
EVTEMP
+ 19 -
8
RGATE + 18 - 6
9 20 22
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 35e-3
Rgate 9 20 1.6
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 3.0e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
S1B S2B
CA
13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*52),3))}
.MODEL DbodyMOD D (IS=6.0E-11 N=1.14 RS=3.9e-3 TRS1=3.5e-3 TRS2=3.0e-6
+ CJO=1.1e-9 M=0.63 TT=6.2e-8 XTI=4.5)
.MODEL DbreakMOD D (RS=10 TRS1=5.0e-3 TRS2=-5.0e-6)
.MODEL DplcapMOD D (CJO=3.5e-10 IS=1.0e-30 N=10 M=0.65)
.MODEL MmedMOD NMOS (VTO=3.55 KP=3 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=1.6)
.MODEL MstroMOD NMOS (VTO=4.0 KP=25 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.95 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=16 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.15e-3 TC2=-9.5e-7)
.MODEL RdrainMOD RES (TC1=9.0e-3 TC2=2.5e-5)
.MODEL RSLCMOD RES (TC1=3.0e-3 TC2=2.5e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-4.1e-3 TC2=-1.0e-5)
.MODEL RvtempMOD RES (TC1=-4.0e-3 TC2=1.0e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-5.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B














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