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零件编号 | FDC606P | ||
描述 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.5 V
RDS(ON) = 35 mΩ @ VGS = –2.5 V
RDS(ON) = 53 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.606
FDC606P
7’’
Ratings
–12
±8
–6
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
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页数 | 5 页 | ||
下载 | [ FDC606P.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDC606P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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