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PDF ( 数据手册 , 数据表 ) FDC606P

零件编号 FDC606P
描述 P-Channel 1.8V Specified PowerTrench MOSFET
制造商 Fairchild Semiconductor
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FDC606P 数据手册, 描述, 功能
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–6 A, –12 V.
RDS(ON) = 26 m@ VGS = –4.5 V
RDS(ON) = 35 m@ VGS = –2.5 V
RDS(ON) = 53 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.606
FDC606P
7’’
Ratings
–12
±8
–6
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)












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