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零件编号 | FC123 | ||
描述 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | ||
制造商 | Sanyo Semicon Device | ||
LOGO | |||
1 Page
Ordering number:EN3277
FC123
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistance (R1=47kΩ).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC123 is formed with two chips, being equiva-
lent to the 2SA1508, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC123]
Electrical Connection
E1:Emitter 1
B1:Base 1
C2:Collcector 2
E2:Emitter 2
B2:Base 2
C1:Collcetor 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=–40V, IE=0
VEB=–5V, IC=0
VCE=–5V, IC=–10mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
IC=–5mA, IB=–0.25mA
IC=–10µA, IE=0
IC=–100µA, RBE=∞
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–5mA
Note:The specifications shown above are for each individual transistor.
Marking:123
Ratings
–50
–50
–5
–100
–200
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
100
–50
–50
–0.4
–0.8
33
200
5.1
–0.1
–0.55
–2.0
47
max
–0.1
–0.1
–0.3
–0.8
–4.0
61
Unit
µA
µA
MHz
pF
V
V
V
V
V
kΩ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2160MO, TS No.3277-1/2
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页数 | 2 页 | ||
下载 | [ FC123.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FC12 | High-Frequency Amp/ AM Applications/ Low-Frequency Amp | Sanyo Semicon Device |
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FC121 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | Sanyo Semicon Device |
FC123 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | Sanyo Semicon Device |
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