DataSheet8.cn


PDF ( 数据手册 , 数据表 ) FMB175

零件编号 FMB175
描述 NPN SILICON RF POWER TRANSISTOR
制造商 Advanced Semiconductor
LOGO Advanced Semiconductor LOGO 


1 Page

No Preview Available !

FMB175 数据手册, 描述, 功能
FMB175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB175 is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO
65 V
VCEO
36 V
VCES
65 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
270 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.7 OC/W
PACKAGE STYLE .500 6L FLG
CA
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
BE
.725/18,42
GF
H
MINIMUM
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10589
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICES VCE = 28 V
hFE VCE = 5.0 V
IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
15
20 200
UNITS
V
V
V
V
mA
---
COB VCB = 28 V
f = 1.0 MHz
200 pF
PG
ηC
VCC = 28 V
POUT = 175 W
f = 108 MHz
10
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1












页数 1 页
下载[ FMB175.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
FMB175NPN SILICON RF POWER TRANSISTORAdvanced Semiconductor
Advanced Semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap