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零件编号 | FJV4108R | ||
描述 | PNP Epitaxial Silicon Transistor | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
FJV4108R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=22KΩ)
• Complement to FJV3108R
Marking
R78
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -10µA, IE=0
IC= -100µA, IB=0
VCB= -40V, IE=0
VCE= -5V, IC= -5mA
IC= -10mA, IB= -0.5mA
VCE= -10V, IC= -5mA
VCB= -10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE= -5V, IC= -100µA
VCE= -0.3V, IC= -2mA
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
R1
B
R2
Value
-50
-50
-10
-100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
-50
-50
56
-0.8
32
1.9
Typ.
200
5.5
47
2.1
Max.
-0.1
Units
V
V
µA
-0.3 V
MHz
pF
V
-4 V
62 KΩ
2.4
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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页数 | 4 页 | ||
下载 | [ FJV4108R.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FJV4108R | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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