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PDF ( 数据手册 , 数据表 ) FJNS3213R

零件编号 FJNS3213R
描述 NPN Epitaxial Silicon Transistor
制造商 Fairchild Semiconductor
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FJNS3213R 数据手册, 描述, 功能
FJNS3213R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1 =2.2K, R2=47K)
• Complement to FJNS4213R
1 TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
50
10
100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10µA, IE=0
IC=100µA, IB=0
VCB=40V, IE=0
VCE=5V, IC=5mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VCB=10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE=5V, IC=100µA
VCE=0.2V, IC=5mA
Min.
50
50
68
Typ.
250
3.7
Max.
0.1
0.3
0.5
1.5
0.042
2.2
0.047
1.1
2.9
0.052
C
E
Units
V
V
µA
V
MHz
pF
V
V
K
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002












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