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零件编号 | FJN3312R | ||
描述 | NPN Epitaxial Silicon Transistor | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
FJN3312R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJN4312R
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
40
5
100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
IC=100µA, IE=0
IE=1mA, IB=0
VCB=30V, IE=0
VCE=5V, IC=1mA
IC=10mA, IB=1mA
VCB=10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE=10V, IC=5mA
R Input Resistor
Min.
40
40
100
32
Equivalent Circuit
C
R
B
E
Typ.
3.7
250
47
Max.
0.1
600
0.3
Units
V
V
µA
V
pF
MHz
62 KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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页数 | 3 页 | ||
下载 | [ FJN3312R.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FJN3312R | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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