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PDF ( 数据手册 , 数据表 ) FJN3308R

零件编号 FJN3308R
描述 NPN Epitaxial Silicon Transistor
制造商 Fairchild Semiconductor
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FJN3308R 数据手册, 描述, 功能
FJN3308R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47K, R2=22K)
• Complement to FJN4308R
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
50
10
100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
C
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10µA, IE=0
IC=100µΑ, IB=0
VCB=40V, IE=0
VCE=5V, IC=5mA
IC=10mA, IB=0.5mA
IC=10mA, IB=0.5mA
VCB=10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE=5V, IC=100µA
VCE=0.3V, IC=2mA
Min.
50
50
56
0.8
32
1.9
Typ.
250
3.7
47
2.1
Max.
0.1
Units
V
V
µA
0.3 V
MHz
pF
V
4V
62 K
2.4
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002












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