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零件编号 | FJC2098 | ||
描述 | NPN Epitaxial Silicon Transistor | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
FJC2098
Camera Strobe Flash Application
• Complement to FJC1386
• High Collector Current
• Low Collector-Emitter Saturation Voltage
1 SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Value
50
20
6
5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
COB
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCE=40V, VB=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
IC=4A, IB=0.1A
IC=4A, IB=0.1A
VCB=20V, IE=0, f=1MHz
Min.
50
20
6
120
Typ.
23
Max.
0.5
0.5
390
1.0
1.2
Units
V
V
V
µA
µA
V
V
pF
hFE Classification
Classification
hFE
Q
120 ~ 270
R
180 ~ 390
Marking
JAQ
hFE grade
©2003 Fairchild Semiconductor Corporation
Rev. A2, February 2003
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页数 | 4 页 | ||
下载 | [ FJC2098.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FJC2098 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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