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零件编号 | FJAF6910 | ||
描述 | NPN Triple Diffused Planar Silicon Transistor | ||
制造商 | Fairchild Semiconductor | ||
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1 Page
FJAF6910
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• High Switching Speed : tF(typ.) =0.15µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Rating
1700
800
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=6A
IC=6A, IB=1.5A
IC=6A, IB=1.5A
VCC=200V, IC=6A, RL=33Ω
IB1=1.2A, IB2= - 2.4A
1700
800
6
10
7
1 mA
10 µA
1 mA
V
V
V
10
3V
1.5 V
4 µs
0.3 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
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页数 | 5 页 | ||
下载 | [ FJAF6910.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FJAF6910 | NPN Triple Diffused Planar Silicon Transistor | Fairchild Semiconductor |
FJAF6916 | NPN Triple Diffused Planar Silicon Transistor | Fairchild Semiconductor |
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