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PDF ( 数据手册 , 数据表 ) FH102

零件编号 FH102
描述 High-Frequency Low-Noise Amp/ Differential Amp Applications
制造商 Sanyo Semicon Device
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FH102 数据手册, 描述, 功能
Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp,
Differential Amp Applications
Features
• Composite type with 2 transistors contained in the MCP
package currently in use, improving the mounting
efficiency greatly.
• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
• Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.
Package Dimensions
unit: mm
2149-MCP6
[FH102]
0.25 0.15
654
0 0.1
12
0.65
2.0
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
VCBO
VCEO
VEBO
IC
PC
Mounted on ceramic board
(250mm2×0.8mm), 1unit
Total Dissipation
PT Mounted on ceramic board
(250mm2×0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
Ratings
20
10
2
70
300
Unit
V
V
V
mA
mW
500 mW
150
–55 to +150
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
ICBO
VCB=10V, IE=0
IEBO
VEB=1V, IC=0
hFE VCE=5V, IC=20mA
hFE(small/large) VCE=5V, IC=20mA
VBE(small-large) VCE=5V, IC=20mA
Gain-Bandwidth Product
Output Capacitance
fT
Cob
Reverse Transfer Capacitance Cre
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
Unit
min typ max
1.0 µA
10 µA
90 200
0.7 0.95
1.0 mV
57
GHz
0.75 1.2 pF
0.5 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5












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