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零件编号 | 2SK3157 | ||
描述 | Silicon N Channel MOS FET High Speed Power Switching | ||
制造商 | Hitachi Semiconductor | ||
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2SK3157
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 50 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-769A (Z)
2nd. Edition
Februaty 1999
D
G
S
123
1. Gate
2. Drain
3. Source
2SK3157
Package Dimensions
10.0 ± 0.3
7.0 ± 0.3
φ 3.2 ± 0.2
2.8 ± 0.2
2.5 ± 0.2
Unit: mm
1.2 ± 0.2
1.4 ± 0.2
0.7 ± 0.1
4.45 ± 0.3
2.7
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code TO–220FM
EIAJ
SC–67
JEDEC
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页数 | 9 页 | ||
下载 | [ 2SK3157.PDF 数据手册 ] |
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