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PDF ( 数据手册 , 数据表 ) D1207

零件编号 D1207
描述 METAL GATE RF SILICON FET
制造商 Seme LAB
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D1207 数据手册, 描述, 功能
TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B 12 3
A
54
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D 5.46
E 5.21
F 7.62
G 21.59
H 3.94
I 12.70
J 0.13
K 24.76
M 2.59
N 4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
117W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected] Website http://www.semelab.co.uk
Prelim. 1/99












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