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PDF ( 数据手册 , 数据表 ) DCR820SG64

零件编号 DCR820SG64
描述 Phase Control Thyristor
制造商 Dynex Semiconductor
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DCR820SG64 数据手册, 描述, 功能
DCR820SG
DCR820SG
Phase Control Thyristor
Supersedes October 2000 version, DS4214-5.1
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
s Welding
s Battery Chargers
KEY PARAMETERS
VDRM
IT(AV)
I
TSM
dVdt*
dI/dt
6500V
387A
6000A
1000V/µs
100A/µs
*Higher dV/dt selections available
DS4214-6.0 July 2001
VOLTAGE RATINGS
Type Number
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
DCR820SG60
Repetitive Peak
Voltages
VDRM VRRM
V
6500
6400
6300
6200
6100
6000
Conditions
Tvj = 0˚ to 125˚C,
I = I = 50mA,
DRM RRM
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR820SG62
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
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DCR820SG64 pdf, 数据表
DCR820SG
10000
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
Max
1000
Min
IT
QRA3
100
0.1
dI/dt
25% IRR
IRR
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
100
Fig.10 Stored charge
1000
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
100
Max
Min
10
0.1
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.11 Reverse recovery current
100
12.5
10
7.5
5
I2t
2.5
0.1
0.05
0
1
10 1
5 10
ms Cycles at 50Hz
Duration
0
50
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% VRRM @ Tcase = 125˚C)
0.1
Anode side cooled
Double side
cooled
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
Time - (s)
1.0
10
Fig.13 Maximum (limit) transient thermal impedance
- junction to case
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