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PDF ( 数据手册 , 数据表 ) DCR1275SD28

零件编号 DCR1275SD28
描述 Phase Control Thyristor
制造商 Dynex Semiconductor
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DCR1275SD28 数据手册, 描述, 功能
Replaces March 1998 version, DS4551-3.3
DCR1275SD
DCR1275SD
Phase Control Thyristor
Advance Information
DS4551-4.0 January 2000
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
2800V
1514A
28000A
300V/µs
dI/dt
150A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1275SD28
DCR1275SD26
DCR1275SD25
DCR1275SD24
DCR1275SD23
Repetitive Peak
Voltages
VDRM VRRM
V
2800
2700
2600
2500
2400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Outline type code: D.
See Package Details for further information.
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
I
T(AV)
IT(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Max. Units
1514
2379
2148
A
A
A
1047
1645
1386
A
A
A
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DCR1275SD28 pdf, 数据表
DCR1275SD
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.1 deep (One each side)
Cathode tab
Ø2.8
Gate
Ø76 max
Ø48 nom
Cathode
Ø48 nom
Anode
Nominal weight: 500g
Clamping force: 22kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: D
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
Use of V , r on-state characteristic
TO T
Application Note
Number
AN4506
AN4840
AN4839
AN4870
AN4853
AN4999
AN5001
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