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零件编号 | DBF20 | ||
描述 | 2.0A Single-Phase Bridge Rectifier | ||
制造商 | Sanyo Semicon Device | ||
LOGO | |||
1 Page
Ordering number:EN2817A
DBF20
Silicon Diffused Junction Type
2.0A Single-Phase Bridge Rectifier
Features
· Glass passivation for high reliability.
· Plastic molded structure.
· Peak reverse voltage:VRM=100 to 600V.
· Average rectified current:IO=2.0A.
Package Dimensions
unit:mm
1202
[DBF20]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
DBF20B DBF20C DBF20E DBF20G
VRM
100 200 400
IO Tc=114˚C, with 50×50×1.5mm3 AI fin → → →
600
2.0
Ta=25˚C, without fin
→→→
1.5
IFSM 50Hz sine wave, 1 cycle
Tj
→→→
→→→
60
150
Tstg → → → –40 to +150
Unit
V
A
A
A
˚C
˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Electrical Connection
Symbol
Conditions
VF
IR
Rth(j-a)
Rth(j-c)
IF=0.75A
VR:At each VRM
Without fin
With AI fin
Ratings
min typ max
Unit
1.05 V
10 µA
75 ˚C/W
10 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N118TA, TS No.2817-1/2
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页数 | 2 页 | ||
下载 | [ DBF20.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DBF20 | 2.0A Single-Phase Bridge Rectifier | Sanyo Semicon Device |
DBF20B | Diode ( Rectifier ) | American Microsemiconductor |
DBF20C | Diode ( Rectifier ) | American Microsemiconductor |
DBF20E | Diode ( Rectifier ) | American Microsemiconductor |
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